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| 2007. 2. 21 1/2 semiconductor technical data Z02W100V revision no : 0 zener diode silicon epitaxial planar diode constant voltage regulation application. reference voltage application. wave form clipper features small package : sot-23 sharp breakdown characteristic. maximum rating (ta=25 ) dim millimeters 1. nc 2. anode 3. cathode sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p 7 2 1 3 + _ characteristic symbol rating unit power dissipation p d 200 mw junction temperature t j 150 storage temperature range t stg -55 150 operating temperature t opr -55 150 marking type name lot no. 10a electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit zener voltage (note1) v z i z =1ma 95. 0 - 105. 0 v dynamic impedan (note2) z z i z =1ma - - 700 reverse current i r v r =76v - - 0.2 a (note 1) v z is tested with pulsed (40ms) (note 2) v z is measured at i z by given a very small a.c current signal.
2007. 2. 21 2/2 Z02W100V revision no : 0 zener current i z (a) zener voltage v z (v) i z - v z 30 0 1 10 100 1m 10m 60 90 120 1n 10n 100n reverse surge power dissipation p zsm (w) 1k 1 10 100 pulse width time t w (s) p zsm - t w 1m 10m 100m 1 10 100 p zsm t r repetitive ta=25 c ta=25 c typ. power dissipation p (mw) p - ta 0 0 50 25 75 100 125 150 50 100 200 150 250 ambient temperature ta ( c) * mounted on a glass epoxy circuit board of 20 x 20mm pad dimension of 4 x 4mm temperature coefficient of zener diode z (% / c) temperature coefficient of zener diode z (mw / c) zener voltage v z (v) z - v z 0 s s s s 0 60 70 typ. 50 40 80 %/ c mv/ c 90 110 100 120 130 0.07 0.08 0.11 0.09 0.10 0.12 20 40 60 120 80 100 140 |
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